1/7 www.dynexsemi.com features double side cooling fast turn-on characteristics applications fast capacitor discharge pulse power applications fast crowbar application voltage ratings part and ordering number repetitive peak off-state voltage v drm v repetitive peak reverse voltages v rrm v acr300sg33 3300 t vj = -40c to 125c, i drm = 50ma, v drm , t p = 10ms, v dsm =v drm + 100v 20 t vj = -40c to 125c, i rrm = 50ma, v rrm t p = 10ms, v rsm = v rrm + 100v lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: acr300sg33 note: please use the complete part number when orde ring and quote this number in any future correspondence relating to your order. key parameters v drm 3300v i t(av) 493a i tsm 6500a dv/dt* 3000v/s di/dt 2000a/s t on 400ns outline type code: g (see package details for further information) fig. 1 package outline acr300sg33 fast turn-on asymmetric thyristor ds5081-2.5 june 2006 (ln24670)
semiconductor acr300sg33 2/7 www.dynexsemi.com current ratings t case = 80c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on-state current half wave resistive load 493 a i t(rms) rms value - 774 a i t continuous (direct) on-state current - 630 a single side cooled (anode side) i t(av) mean on-state current half wave resistive load 343 a i t(rms) rms value - 539 a i t continuous (direct) on-state current - 420 a surge ratings symbol parameter test conditions max. units i tsm surge (non-repetitive) on-state current 10ms half si ne, t case = 125c 6.5 ka i 2 t i 2 t for fusing v r = 0 211 ka 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j-c) thermal resistance C junction to case double side co oled dc - 0.042 c/w single side cooled anode dc - 0.070 c/w cathode dc - 0.092 c/w r th(c-h) thermal resistance C case to heatsink clamping force 7.0 1kn double side - 0.018 c/w (with mounting compound) single side - .036 c/w t vj virtual junction temperature on-state (conducting) - 1 35 c reverse (blocking) - 125 c t stg storage temperature range -55 125 c f m clamping force 6 8 kn
semiconductor acr300sg33 3/7 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units v tm maximum on-state voltage at 1000a peak, t case = 25 c - 2.0 v i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125c - 60 ma dv/dt max. linear rate of rise of off-state voltage t o v d = 2000v, t j = 125c, gate open 3000 v/s di/dt rate of rise of on-state current 2000 a/s from v drm to 125a gate source 30v, 10 w , gate rise time t r 100ns, t j = 125c v t(to) threshold voltage t vj = 125c - 1.19 v r t on-state slope resistance t vj = 125c - 0.81 m w t gd delay time v d = 3000v, gate source 30v, 10 w gate rise time t r = 100ns, t j = 25c - 350 ns t r rise time as defined in figure 2 t j = 25c 50 ns i l latching current t j = 25c, v d = 5v - 600 ma i h holding current t j = 25c, r g-k = , i tm = 500a, i t = 5a - 300 ma gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v dwm = 12v, r l = 6 t case = 25c 5 v i gt gate trigger current v dwm = 12v, r l = 6 t case = 125c 500 ma v fgm peak forward gate voltage 40 v v rgm peak reverse gate voltage 10 v i fgm peak forward gate current 20 a p gm peak gate power 40 w p g(av) average gate power average time 10ms max 10 w
semiconductor acr300sg33 4/7 www.dynexsemi.com current carrying capability after device short circ uit curves fig.2 turn-on time measurement
semiconductor acr300sg33 5/7 www.dynexsemi.com fig.3 on-state characteristics fig.4 transient therm al impedance- junction to case 0 20 40 60 80 100 120 140 0 100 200 300 400 500 600 700 800 900 1000 average forward current (a) maximum case temperature ( deg c) double side single side fig.5 average current rating vs temperature
semiconductor acr300sg33 6/7 www.dynexsemi.com package details for further package information, please contact cus tomer services. all dimensions in mm, unless state d otherwise. do not scale. nominal weight: 250g lead length: 420mm lead terminal connector: m4 ring package outline type code: g fig.6 package outline
semiconductor acr300sg33 7/7 www.dynexsemi.com power assembly capability the power assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range o f heatsink and clamping systems in line with advanc es in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power as sembly complete solution (pacs). heatsinks the power assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cool ing (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. stresses above those listed in this data sheet may cause permanent damage to the device. in extreme c onditions, as with all semiconductors, this may include potentially hazard ous rupture of the package. appropriate safety pre cautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com headquarters operations customer service dynex semiconductor ltd tel: +44(0)1522 502753 / 502901. fax: +44(0)1522 50 0020 doddington road, lincoln lincolnshire, ln6 3lf. united kingdom. tel: +44(0)1522 500500 fax: +44(0)1522 500550 ? dynex semiconductor 2003 technical documentation C not for resale. produced in united kingdom. this publication is issued to provide information only wh ich (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. no warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. the company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. info rmation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the users responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. all products and materials ar e sold and services provided subject to the companys conditions of sale, which are ava ilable on request. all brand names and product names used in this publicatio n are trademarks, registered trademarks or trade names of their respective owners.
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